NIST Comparison of the Quantized Hall Resistance and the Realization of the SI OHM Through the Calculable Capacitor

نویسندگان

  • Anne-Marie Jeffery
  • Lai H. Lee
  • John Q. Shields
چکیده

Tbe latest NIST result from the comparison of the quantized Hall resistance (QHR) with the realization of the SI ohm obtained from the NIST calculable capacitor is reported. A small difference between the 1988 result and the present result has led to a re-evaluation of the sources and magnitudes of possible systematic errors.

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تاریخ انتشار 2007